![]() Finally, we show the capability to reproduce experimental data with an extended three-dimensional commercial finite element analysis simulator, in both dry and wet environments, which is useful for future advanced sensor design and optimization.įin field-effect transistor sensor FinFET ISFET high-k dielectric long-term stability low power pH sensing sensing integrated circuits. ![]() Long-term measurements have been performed over 4.5 days with a resulting drift in time δVth/δt = 0.10 mV/h. The pH response in terms of output current reaches Sout = 60%. An intrinsic sensitivity close to the Nernst limit, S = 57 mV/pH, is achieved. The same FinFET architecture is validated as a highly sensitive, stable, and reproducible pH sensor. Here we report the epitaxial synthesis of vertically aligned arrays of 2D fin-oxide heterostructures, a new class of 3D architecture in which high-mobility 2D semiconductor fin Bi2O2Se and single. N-channel fully depleted FinFETs with critical dimensions on the order of 20 nm and HfO2 as a high-k gate insulator have been developed and characterized, showing excellent electrical properties, subthreshold swing, SS ∼ 70 mV/dec, and on-to-off current ratio, Ion/Ioff ∼ 10(6), at room temperature. We also provide an analytical insight of the concept of sensitivity for the electronic integration of sensors. In this work, we propose pH and ion sensors exploiting FinFETs fabricated on bulk silicon by a fully CMOS compatible approach, as an alternative to the widely investigated silicon nanowires on silicon-on-insulator substrates. ![]() However, recent advancements and use of high-performance multigate metal-oxide semiconductor FETs (double-gate, FinFET, trigate, gate-all-around) in computing technology, instead of bulk MOSFETs, raise new opportunities and questions about the most suitable device architectures for sensing integrated circuits. Field-effect transistors (FETs) form an established technology for sensing applications.
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